VS-31DQ09, VS-31DQ09-M3, VS-31DQ10, VS-31DQ10-M3

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Vishay Semiconductors

Revision: 19-Sep-11

1

Document Number: 93321

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Schottky Rectifier, 3.3 A

FEATURES

• Low profile, axial leaded outline

• High frequency operation

• Very low forward voltage drop

• High

purity,

high

temperature

epoxy

encapsulation

for

enhanced

mechanical

strength and moisture resistance

• Guard ring for enhanced ruggedness and

long term reliability

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for commercial level

• Halogen-free according to IEC 61249-2-21 definition

(-M3 only)

DESCRIPTION

The VS-31DQ... axial leaded Schottky rectifier has been

optimized for very low forward voltage drop, with moderate

leakage. Typical applications are in switching power

supplies, converters, freewheeling diodes, and reverse

battery protection

PRODUCT SUMMARY

Package

DO-201AD (C-16)

3.3 A

90 V, 100 V

See Electrical table

3.0 mA at 125 °C

150 °C

Diode variation

Single die

3.0 mJ

Cathode

Anode

C-16

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

3.3

A

90/100

V

210

A

0.85

V

- 40 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-31DQ09

VS-31DQ09-M3

VS-31DQ10

VS-31DQ10-M3

UNITS

Maximum DC reverse voltage

90

90

100

100

V

Maximum working peak

reverse voltage

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

See fig. 4

3.3

A

Maximum peak one cycle

non-repetitive surge current

See fig. 6

5 µs sine or 3 µs rect. pulse

Following any rated load

condition and with rated

210

10 ms sine or 6 ms rect. pulse

34

Non-repetitive avalanche energy

3.0

mJ

Repetitive avalanche current

Current decaying linearly to zero in 1 μs

0.5

A