BSM300GA170DN2E3166 datasheet(2/9 Pages) SIEMENS

Part #	BSM300GA170DN2E3166

Description	IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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Semiconductor Group

2

Jul-31-1996

BSM300GA170DN2 E3166

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Gate threshold voltage

VGE = VCE, IC = 20 mA

VGE(th)

4.8

5.5

6.2

V

Collector-emitter saturation voltage

VGE = 15 V, IC = 300 A, Tj = 25 °C

VGE = 15 V, IC = 300 A, Tj = 125 °C

VCE(sat)

-

4.6

3.4

5.3

3.9

Zero gate voltage collector current

VCE = 1700 V, VGE = 0 V, Tj = 25 °C

VCE = 1700 V, VGE = 0 V, Tj = 125 °C

ICES

-

8

2

-

3

mA

Gate-emitter leakage current

VGE = 20 V, VCE = 0 V

IGES

-

400

nA

AC Characteristics

Transconductance

VCE = 20 V, IC = 300 A

gfs

108

-

S

Input capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Ciss

-

44

-

nF

Output capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Coss

-

3.5

-

Reverse transfer capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Crss

-

1

-

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BSM300GA170DN2E3166 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

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