VS-MBR340, VS-MBR340-M3

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Vishay Semiconductors

Revision: 19-Sep-11

2

Document Number: 93449

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

Notes

(1)

thermal runaway condition for a diode on its own heatsink

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum forward voltage drop

See fig. 1

1.0 A

0.5

V

3.0 A

0.6

9.4 A

0.85

1.0 A

0.37

3.0 A

0.49

9.4 A

0.72

Maximum reverse leakage current

See fig. 2

0.6

mA

8

20

Typical junction capacitance

190

pF

Typical series inductance

Measured lead to lead 5 mm from package body

9.0

nH

Maximum voltage rate of change

dV/dt

10 000

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

temperature range

- 40 to 150

°C

Maximum thermal resistance,

junction to lead

DC operation

See fig. 4

28

°C/W

Approximate weight

1.2

g

0.042

oz.

Marking device

Case style C-16

MBR340

dP

tot

dT

J

-------------

1

R

thJA

--------------

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