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BSM400GB60DN2 Datasheet(PDF) 7 Page - Siemens Semiconductor Group |
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BSM400GB60DN2 Datasheet(HTML) 7 Page - Siemens Semiconductor Group |
7 / 9 page Semiconductor Group 7 Apr-25-1997 BSM 400 GB 60 DN2 Typ. switching time I = f (IC) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, RG = 4.7 Ω 0 200 400 600 A 1000 I C 1 10 2 10 3 10 4 10 ns t tdon tr tdoff tf Typ. switching time t = f (RG) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, IC = 400 A 0 10 Ω 30 R G 1 10 2 10 3 10 4 10 ns t tdon tr tdoff tf Typ. switching losses E = f (IC) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, RG = 4.7 Ω 0 200 400 600 A 1000 I C 0 20 40 60 80 mWs 120 E Eon Eoff Typ. switching losses E = f (RG) , inductive load , Tj = 125°C par.: VCE = 300V, VGE = ± 15 V, IC = 400 A 0 10 Ω 30 R G 0 20 40 60 80 mWs 120 E Eon Eoff |
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