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BSM50GD120DN2E3226 Datasheet(PDF) 5 Page - Siemens Semiconductor Group

Part # BSM50GD120DN2E3226
Description  IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate)
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BSM50GD120DN2E3226 Datasheet(HTML) 5 Page - Siemens Semiconductor Group

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Semiconductor Group
5
Jan-10-1997
BSM 50 GD120DN2E3226
Typ. output characteristics
IC = f (VCE)
parameter:
tp = 80 µs, Tj = 25 °C
0
1
2
3
V
5
V
CE
0
10
20
30
40
50
60
70
A
90
I
C
17V
15V
13V
11V
9V
7V
Typ. output characteristics
IC = f (VCE)
parameter:
tp = 80 µs, Tj = 125 °C
0
1
2
3
V
5
V
CE
0
10
20
30
40
50
60
70
A
90
I
C
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
IC = f (VGE)
parameter:
tp = 80 µs, VCE = 20 V
0
2
4
6
8
10
V
14
V
GE
0
10
20
30
40
50
60
70
A
90
I
C


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