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6CUT10-E Datasheet(PDF) 1 Page - Vishay Siliconix |
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6CUT10-E Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page VS-6CUT10-E, VS-6CWT10FN-E www.vishay.com Vishay Semiconductors Revision: 03-Nov-11 1 Document Number: 94662 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Performance Schottky Generation 5.0, 2 x 3 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency • Increased ruggedness for reverse avalanche capability • RBSOA available • Negligible switching losses • Submicron trench technology • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Specific for PV cells bypass diode • High efficiency SMPS • High frequency switching • Output rectification • Reverse battery protection • Freewheeling • DC/DC systems • Increased power density systems PRODUCT SUMMARY Package D-PAK (TO-252AA), I-PAK (TO-251AA) IF(AV) 2 x 3 A VR 100 V VF at IF 0.63 V IRM max. 1 mA at 125 °C TJ max. 175 °C Diode variation Common cathode EAS 12 mJ D-PAK (TO-252AA) I-PAK (TO-251AA) VS-6CUT10-E VS-6CWT10FN-E Base common cathode Common cathode 2 4 13 Anode Anode Base common cathode Common cathode 2 4 13 Anode Anode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS VRRM 100 V VF 3 Apk, TJ = 125 °C (typical, per leg) 0.6 TJ Range - 55 to 175 °C VOLTAGE RATINGS PARAMETER SYMBOL TEST CONDITIONS VS-6CUT10-E VS-6CWT10FN-E UNITS Maximum DC reverse voltage VR TJ = 25 °C 100 V |
Similar Part No. - 6CUT10-E_12 |
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Similar Description - 6CUT10-E_12 |
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