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C67070-A2516-A67 Datasheet(PDF) 7 Page - Siemens Semiconductor Group |
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C67070-A2516-A67 Datasheet(HTML) 7 Page - Siemens Semiconductor Group |
7 / 9 page Semiconductor Group 7 Mar-27-1996 BSM 75 GD 120 DN2 Typ. switching time I = f (IC) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 15 Ω 0 20 40 60 80 100 120 140 A 180 I C 1 10 2 10 3 10 4 10 ns t tdon tr tdoff tf Typ. switching time t = f (RG) , inductive load , Tj = 125°C par.: VCE = 600V, IC = 75 A 0 10 20 30 40 50 60 Ω 80 R G 1 10 2 10 3 10 4 10 ns t tdon tr tdoff tf Typ. switching losses E = f (IC) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 15 Ω 0 20 40 60 80 100 120 140 A 180 I C 0 5 10 15 20 25 30 mWs 40 E Eon Eoff Typ. switching losses E = f (RG) , inductive load , Tj = 125°C par.: VCE = 600V, VGE = ± 15 V, IC = 75 A 0 10 20 30 40 50 60 Ω 80 R G 0 5 10 15 20 25 30 mWs 40 E Eon Eoff |
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