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Q67000-S283 Datasheet(PDF) 6 Page - Siemens Semiconductor Group |
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Q67000-S283 Datasheet(HTML) 6 Page - Siemens Semiconductor Group |
6 / 7 page Semiconductor Group 6 Gate threshold voltage V GS(th) = f (Tj) parameter: V DS = 3 V, ID = 1 mA, (spread) Drain current I D = f (TA) parameter: V GS ≥ 3 V Forward characteristics of reverse diode I F = f (VSD) parameter: t p = 80 µs, Tj, (spread) Transient thermal impedance Z thJA = f (tp) parameter: D = t p / T BSP 135 |
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