Q67000-S283 datasheet(6/7 Pages) SIEMENS

Part #	Q67000-S283

Description	SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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Semiconductor Group

6

Gate threshold voltage

V

GS(th) = f (Tj)

parameter:

V

DS = 3 V, ID = 1 mA, (spread)

Drain current

I

D = f (TA)

parameter:

V

GS ≥ 3 V

Forward characteristics of reverse diode

I

F = f (VSD)

parameter:

t

p = 80 µs, Tj, (spread)

Transient thermal impedance

Z

thJA = f (tp)

parameter:

D = t

p / T

BSP 135

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