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MCR100-8 Datasheet(PDF) 1 Page - Tiger Electronic Co.,Ltd |
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MCR100-8 Datasheet(HTML) 1 Page - Tiger Electronic Co.,Ltd |
1 / 2 page TO-92 Plastic-Encapsulate Transistors MCR 100- 6, - 8 Silicon Planar PNPN Thyristor FEATURES Current-IGT: 200 µ A ITRMS: 0.8 A VDRM: MCR100-6: 400 V MCR100-8: 600 V Operating and storage junction temperature range TJ, Tstg: -55 ℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT On state voltage * VTM ITM=1A 1.7 V Gate trigger voltage VGT VAK=7V 0.8 V Peak Repetitive forward and reverse blocking voltage MCR100-6 MCR100-8 VDRM AND VRRM IDRM= 10 µA ,VMAX=1010 V 400 600 V Peak forward or reverse blocking Current IDRM IRRM VAK= Rated VDRM or VRRM 10 µA Holding current IH IHL= 20 mA , Av = 7 V 5 mA A2 5 15 µA A1 15 30 µA A 30 80 µA Gate trigger current IGT B VAK=7V 80 200 µA * Forward current applied for 1 ms maximum duration, duty cycle≤1%. 1 2 3 TO-92 1. KATHODE 2. GATE 3. ANODE TIGER ELECTRONIC CO.,LTD |
Similar Part No. - MCR100-8 |
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Similar Description - MCR100-8 |
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