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Q67000-S652 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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Q67000-S652 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
2 / 9 page Semiconductor Group 2 Sep-12-1996 BSP 89 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ≤ 72 K/W Therminal resistance, junction-soldering point 1) RthJS ≤ 12 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C V(BR)DSS 240 - - V Gate threshold voltage VGS=VDS, ID = 1 mA VGS(th) 0.8 1.5 2 Zero gate voltage drain current VDS = 240 V, VGS = 0 V, Tj = 25 °C VDS = 240 V, VGS = 0 V, Tj = 125 °C VDS = 60 V, VGS = 0 V, Tj = 25 °C IDSS - - - - 10 0.1 0.2 100 1 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-state resistance VGS = 10 V, ID = 0.36 A VGS = 4.5 V, ID = 0.36 A RDS(on) - - 4 3.5 10 6 Ω |
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