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V40100G Datasheet(PDF) 1 Page - Vishay Siliconix |
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V40100G Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page V40100G, VF40100G, VB40100G & VI40100G Vishay General Semiconductor Document Number: 88970 Revision: 24-Jun-09 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 2 x 20 A VRRM 100 V IFSM 200 A VF at IF = 20 A 0.67 V TJ max. 150 °C TO-220AB 1 2 3 1 K 2 3 TO-263AB 1 2 K TO-262AA PIN 1 PIN 2 PIN 3 K PIN 1 PIN 2 K HEATSINK PIN 1 PIN 2 PIN 3 PIN 1 PIN 2 CASE PIN 3 V40100G VF40100G VI40100G VB40100G TMBS ® ITO-220AB 1 2 3 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V40100G VF40100G VB40100G VI40100G UNIT Maximum repetitive peak reverse voltage VRRM 100 V Maximum average forward rectified current (fig. 1) per device per diode IF(AV) 40 20 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 200 A Non-repetitive avalanche energy at TJ = 25 °C, L = 90 mH per diode EAS 230 mJ Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C per diode IRRM 1.0 A Voltage rate of change (rated VR) dV/dt 10 000 V/µs Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 V Operating junction and storage temperature range TJ, TSTG - 40 to + 150 °C |
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Similar Description - V40100G_12 |
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