Electronic Components Datasheet Search |
|
VT1060C Datasheet(PDF) 1 Page - Vishay Siliconix |
|
VT1060C Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page VT1060C, VFT1060C, VBT1060C & VIT1060C Vishay General Semiconductor Document Number: 89131 Revision: 08-Sep-09 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 2 x 5 A VRRM 60 V IFSM 100 A VF at IF = 5.0 A 0.50 V TJ max. 150 °C TO-220AB 1 2 3 1 K 2 3 TO-263AB 1 2 K TO-262AA PIN 1 PIN 2 PIN 3 K PIN 1 PIN 2 K HEATSINK PIN 1 PIN 2 PIN 3 PIN 1 PIN 2 CASE PIN 3 TMBS ® ITO-220AB 1 2 3 VT1060C VFT1060C VIT1060C VBT1060C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VT1060C VFT1060C VBT1060C VIT1060C UNIT Maximum repetitive peak reverse voltage VRRM 60 V Maximum average forward rectified current (fig. 1) per device per diode IF(AV) 10 5 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 100 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode EAS 65 mJ Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C per diode IRRM 1.0 A Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 V Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C |
Similar Part No. - VT1060C_12 |
|
Similar Description - VT1060C_12 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |