Q67000-S216 datasheet(2/8 Pages) SIEMENS

Part #	Q67000-S216

Description	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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2 / 8 page

Semiconductor Group

2

Sep-13-1996

BSS 138

Maximum Ratings

Parameter

Symbol

Values

Unit

Chip or operating temperature

Tj

-55 ... + 150

°C

Storage temperature

Tstg

-55 ... + 150

Thermal resistance, chip to ambient air

RthJA

≤ 350

K/W

Therminal resistance, chip-substrate- reverse side 1)

RthJSR

≤ 285

DIN humidity category, DIN 40 040

E

IEC climatic category, DIN IEC 68-1

55 / 150 / 56

1) For package mounted on aluminium

15 mm x 16.7 mm x 0.7 mm

Electrical Characteristics, at

Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 25 °C

V(BR)DSS

50

-

V

Gate threshold voltage

VGS=VDS, ID = 1 mA

VGS(th)

0.8

1.2

1.6

Zero gate voltage drain current

VDS = 50 V, VGS = 0 V, Tj = 25 °C

VDS = 50 V, VGS = 0 V, Tj = 125 °C

VDS = 30 V, VGS = 0 V, Tj = 25 °C

IDSS

-

0.05

100

5

0.5

µA

nA

Gate-source leakage current

VGS = 20 V, VDS = 0 V

IGSS

-

10

100

nA

Drain-Source on-state resistance

VGS = 10 V, ID = 0.22 A

VGS = 4.5 V, ID = 0.22 A

RDS(on)

-

2.8

1.8

6

3.5

Ω

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Q67000-S216 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Q67000-S216 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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