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Q67000-S216 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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Q67000-S216 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
2 / 8 page Semiconductor Group 2 Sep-13-1996 BSS 138 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ≤ 350 K/W Therminal resistance, chip-substrate- reverse side 1) RthJSR ≤ 285 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C V(BR)DSS 50 - - V Gate threshold voltage VGS=VDS, ID = 1 mA VGS(th) 0.8 1.2 1.6 Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 125 °C VDS = 30 V, VGS = 0 V, Tj = 25 °C IDSS - - - - - 0.05 100 5 0.5 µA nA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-state resistance VGS = 10 V, ID = 0.22 A VGS = 4.5 V, ID = 0.22 A RDS(on) - - 2.8 1.8 6 3.5 Ω |
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