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BSS149 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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BSS149 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
2 / 6 page Semiconductor Group 2 BSS 149 Electrical Characteristics at T j = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V GS = − 3 V, ID = 0.25 mA V (BR)DSS 200 – – V Gate threshold voltage V DS = 3 V, ID = 1 mA V GS(th) − 1.8 − 1.2 − 0.7 Drain-source cutoff current V DS = 200 V, VGS = − 3 V T j = 25 ˚C T j = 125 ˚C I DSS – – – – 0.2 200 µA Gate-source leakage current V GS = 20 V, VDS = 0 I GSS – 10 100 nA Drain-source on-resistance V GS = 0 V, ID = 0.05 A R DS(on) – 2.5 3.5 Ω Dynamic Characteristics Forward transconductance V DS ≥ 2 × ID × RDS(on)max, ID = 0.35 A g fs 0.4 0.6 – S Input capacitance V GS = 0, VDS = 25 V, f = 1 MHz C iiss – 500 670 pF Output capacitance V GS = 0, VDS = 25 V, f = 1 MHz C oss –40 60 Reverse transfer capacitance V GS = 0, VDS = 25 V, f = 1 MHz C rss –12 20 Turn-on time t on, (ton = td(on) + tr) V DD =30 V, VGS = − 2 V ... + 5 V, RGS =50 Ω, I D = 0.29 A t d(on) – 7 10 ns t r –20 30 Turn-off time t off, (toff = td(off) + tf) V DD =30 V, VGS = − 2 V ... + 5 V, RGS =50 Ω, I D = 0.29 A t d(off) –60 80 t f –50 65 |
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