BSS149 datasheet(2/6 Pages) SIEMENS

Part #	BSS149

Description	SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

2

BSS 149

Electrical Characteristics

at

T

j = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain-source breakdown voltage

V

GS = − 3 V, ID = 0.25 mA

V

(BR)DSS

200

–

V

Gate threshold voltage

V

DS = 3 V, ID = 1 mA

V

GS(th)

− 1.8

− 1.2

− 0.7

Drain-source cutoff current

V

DS = 200 V, VGS = − 3 V

T

j

= 25 ˚C

T

j

= 125 ˚C

I

DSS

–

0.2

200

µA

Gate-source leakage current

V

GS = 20 V, VDS = 0

I

GSS

–

10

100

nA

Drain-source on-resistance

V

GS = 0 V, ID = 0.05 A

R

DS(on)

–

2.5

3.5

Ω

Dynamic Characteristics

Forward transconductance

V

DS ≥ 2 × ID × RDS(on)max, ID = 0.35 A

g

fs

0.4

0.6

–

S

Input capacitance

V

GS = 0, VDS = 25 V, f = 1 MHz

C

iiss

–

500

670

pF

Output capacitance

V

GS = 0, VDS = 25 V, f = 1 MHz

C

oss

–40

60

Reverse transfer capacitance

V

GS = 0, VDS = 25 V, f = 1 MHz

C

rss

–12

20

Turn-on time

t

on, (ton = td(on) + tr)

V

DD =30 V, VGS = − 2 V ... + 5 V, RGS =50 Ω,

I

D = 0.29 A

t

d(on)

–

7

10

ns

t

r

–20

30

Turn-off time

t

off, (toff = td(off) + tf)

V

DD =30 V, VGS = − 2 V ... + 5 V, RGS =50 Ω,

I

D = 0.29 A

t

d(off)

–60

80

t

f

–50

65

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