BSS192 datasheet(6/7 Pages) SIEMENS

Part #	BSS192

Description	SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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6 / 7 page

Semiconductor Group

6

18/02/1997

BSS 192

Typ. output characteristics

ID = ƒ(VDS)

parameter:

tp = 80 µs , Tj = 25 °C

0

-1

-2

-3

-4

-5

-6

-7

-8

V

-10

V

DS

0.00

-0.04

-0.08

-0.12

-0.16

-0.20

-0.24

-0.28

A

-0.34

I

D

V

GS

[V]

a

-2.0

b

-2.5

c

-3.0

d

-3.5

e

-4.0

f

-4.5

g

-5.0

h

-6.0

i

-7.0

j

-8.0

k

-9.0

l

Ptot = 1W

l

-10.0

Typ. drain-source on-resistance

RDS (on) = ƒ(ID)

parameter:

tp = 80 µs, Tj = 25 °C

0.00

-0.04

-0.08

-0.12

-0.16

-0.20

A

-0.26

I

D

0

5

10

15

20

25

30

35

40

45

50

55

Ω

65

R

DS (on)

VGS [V] =

a

-2.0

b

-2.5

c

-3.0

d

-3.5

e

-4.0

f

-4.5

g

-5.0

h

-6.0

i

-7.0

j

-8.0

k

-9.0

l

-10.0

Typ. transfer characteristics

ID = f(VGS)

parameter:

tp = 80 µs

VDS≥ 2 x ID x RDS(on)max

0

-1

-2

-3

-4

-5

-6

-7

-8

V

-10

V

GS

0.00

-0.05

-0.10

-0.15

-0.20

-0.25

-0.30

A

-0.40

I

D

Typ. forward transconductance

gfs = f (ID)

parameter:

tp = 80 µs,

VDS≥2 x ID x RDS(on)max

0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30

A

-0.40

I

D

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

S

0.20

g

fs

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BSS192 Datasheet(PDF) 6 Page - Siemens Semiconductor Group

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