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BSS192 Datasheet(PDF) 6 Page - Siemens Semiconductor Group |
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BSS192 Datasheet(HTML) 6 Page - Siemens Semiconductor Group |
6 / 7 page Semiconductor Group 6 18/02/1997 BSS 192 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 V DS 0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 -0.28 A -0.34 I D V GS [V] a a -2.0 b b -2.5 c c -3.0 d d -3.5 e e -4.0 f f -4.5 g g -5.0 h h -6.0 i i -7.0 j j -8.0 k k -9.0 l Ptot = 1W l -10.0 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 0.00 -0.04 -0.08 -0.12 -0.16 -0.20 A -0.26 I D 0 5 10 15 20 25 30 35 40 45 50 55 Ω 65 R DS (on) VGS [V] = a a -2.0 b b -2.5 c c -3.0 d d -3.5 e e -4.0 f f -4.5 g g -5.0 h h -6.0 i i -7.0 j j -8.0 k k -9.0 l l -10.0 Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max 0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 V GS 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 A -0.40 I D Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 A -0.40 I D 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 S 0.20 g fs |
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