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Q67000-S105 Datasheet(PDF) 6 Page - Siemens Semiconductor Group |
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Q67000-S105 Datasheet(HTML) 6 Page - Siemens Semiconductor Group |
6 / 7 page Semiconductor Group 6 12/05/1997 BSS 295 Typ. output characteristics I D = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 V DS 0.0 0.4 0.8 1.2 1.6 2.0 2.4 A 3.2 I D V GS [V] a a 2.0 b b 2.5 c c 3.0 d d 3.5 e e 4.0 f f 4.5 g g 5.0 h h 6.0 i i 7.0 j j 8.0 k k 9.0 l Ptot = 1W l 10.0 Typ. drain-source on-resistance R DS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 0.0 0.4 0.8 1.2 1.6 2.0 A 2.8 I D 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Ω 0.9 R DS (on) VGS [V] = a 2.0 VGS [V] = a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 6.0 h h 7.0 i i 8.0 j j 9.0 k k 10.0 Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max 0 1 2 3 4 5 6 7 8 V 10 V GS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 A 4.5 I D Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 0.0 0.5 1.0 1.5 2.0 2.5 3.0 A 4.0 I D 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 S 2.2 g fs |
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