Q62702-S560 datasheet(2/6 Pages) SIEMENS

Part #	Q62702-S560

Description	PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

2

BSS 80

BSS 82

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Base-emitter saturation voltage1)

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

Collector-emitter saturation voltage1)

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

DC current gain

IC = 100

µA, VCE = 10 V

BSS 80 B/82 B

BSS 80 C/82 C

IC = 1 mA, VCE = 10 V

BSS 80 B/82 B

BSS 80 C/82 C

IC = 10 mA, VCE = 10 V1)

BSS 80 B/82 B

BSS 80 C/82 C

IC = 150 mA, VCE = 10 V1)

BSS 80 B/82 B

BSS 80 C/82 C

IC = 500 mA, VCE = 10 V1)

BSS 80 B/82 B

BSS 80 C/82 C

V

Collector-emitter breakdown voltage

IC = 10 mA

BSS 80

BSS 82

V(BR)CE0

40

60

–

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Collector-base breakdown voltage

IC = 10

µA

V(BR)CB0

60

–

Emitter-base breakdown voltage

IE = 10

µA

V(BR)EB0

5––

nA

Emitter-base cutoff current

VEB = 3 V

IEB0

––10

nA

µA

Collector-base cutoff current

VCB = 50 V

VCB = 50 V, TA = 150 ˚C

ICB0

–

10

–

hFE

40

75

40

100

40

100

40

100

40

50

–

120

300

–

V

VCEsat

–

0.4

1.6

VBEsat

–

1.3

2.6

1)

Pulse test conditions: t

≤ 300 µs, D = 2 %.

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Q62702-S560 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Q62702-S560 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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