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BTS112A Datasheet(PDF) 6 Page - Siemens Semiconductor Group |
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BTS112A Datasheet(HTML) 6 Page - Siemens Semiconductor Group |
6 / 9 page Semiconductor Group 6 Drain-source on-state resistance R DS(on) = f (Tj) Parameter: I D = 5 A, VGS = 10 V Typ. transfer characteristic I D = f (VGS) Parameter :t p = 80 µs, VDS = 25 V Gate threshold voltage V GS(th) = f (Tj) Parameter :V DS = VGS, ID = 1 mA Typ. transconductance g fs = f (ID) Parameter: t p = 80 µs, VDS = 25 V BTS 112A |
Similar Part No. - BTS112A |
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Similar Description - BTS112A |
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