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R6008ANX Datasheet(PDF) 2 Page - Rohm

Part # R6008ANX
Description  Nch 600V 8A Power MOSFET
Download  14 Pages
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

R6008ANX Datasheet(HTML) 2 Page - Rohm

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Data Sheet
R6008ANX
2/13
2012.01 - Rev.C
Ω
Gate input resistance
RG
f = 1MHz, open drain
-
8.2
-
Static drain - source
on - state resistance
RDS(on)
*6
Ω
Tj = 25°C
-
0.6
0.8
Tj = 125°C
-
1.3
-
VGS = 10V, ID = 4A
Gate threshold voltage
VGS (th)
VDS = 10V, ID = 1mA
2.5
Gate - Source leakage current
VGS = ±30V, VDS = 0V
-
700
Tj = 25°C
Drain - Source avalanche
breakdown voltage
-
600
-
IDSS
IGSS
-
V(BR)DS
Symbol
Conditions
Values
-
-
70
°C
-
-
±100
-
-
4.5
0.1
-
V
Symbol
-
Unit
°C/W
-
2.5
-
-
nA
V/ns
Tj = 125°C
Tj = 125°C
50
V
RthJC
265
µA
100
1000
Parameter
Zero gate voltage
drain current
V(BR)DSS
VGS = 0V, ID = 8A
VGS = 0V, ID = 1mA
Values
Parameter
Drain - Source breakdown
voltage
VDS = 600V, VGS = 0V
Conditions
Symbol
Absolute maximum ratings
Thermal resistance
Thermal resistance, junction - case
Parameter
Max.
V
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
Electrical characteristics (T
a = 25°C)
Drain - Source voltage slope
dv/dt
VDS = 480V, ID = 8A
-
Typ.
Values
Typ.
°C/W
Unit
Max.
Unit
Tsold
RthJA
Min.
Min.


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