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BTS129 Datasheet(PDF) 7 Page - Siemens Semiconductor Group |
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BTS129 Datasheet(HTML) 7 Page - Siemens Semiconductor Group |
7 / 8 page Semiconductor Group 7 Typ. gate-source leakage current I GSS = f (TC) Parameter: V GS = 20 V, VDS = 0 Forward characteristics of reverse diode I F = f (VSD) Parameter :T j, tp = 80 µs Typ. capacitances C = f (V DS) Parameter: V GS = 0, f = 1 MHz Transient thermal impedance Z thJC = f (tp) Parameter :D = t p/T BTS 129 |
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