Data Sheet

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© 2011 ROHM Co., Ltd. All rights reserved.

10V Drive Nch MOSFET

R6046ANZ



Structure



Dimensions (Unit : mm)

Silicon N-channel MOSFET



Features

1) Low on-resistance.

2) Low input capacitance.

3) High ESD.



Application

Switching



Packaging specifications



Inner circuit

Package

Bulk

Code

-

Basic ordering unit (pieces)

360

R6046ANZ





Absolute maximum ratings (Ta = 25

C)

Symbol

Limits

Unit

Drain-source voltage

600

V

Gate-source voltage

30

V

Continuous

46

A

Pulsed

115

A

Continuous

46

A

Pulsed

115

A

Avalanche current

23

A

Avalanche energy

142

mJ

Power dissipation

120

W

Channel temperature

150

C

Range of storage temperature

55 to 150

C

*1 Pw

10s, Duty cycle1%

*2 L 500

*3 Limited only by maximum channel temperature allowed.



Thermal resistance

Symbol

Limits

Unit

Channel to Case

1.04

C / W

Parameter

Type

Source current

(Body Diode)

Drain current

Parameter

*1

(1) Gate

(2) Drain

(3) Source

1 BODY DIODE

*2

*2

*3

*4

*3

15.5

φ3.6

5.5

3.0

2.0

3.0

0.9

5.45

5.45

0.75

2.0

TO-3PF

(1)

(2)

(3)

*1

(1)

(3)

(2)

∗1

(1) Gate

(2) Drain

(3) Source

1/5

2011.10 - Rev.A