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R6046ANZ Datasheet(PDF) 1 Page - Rohm |
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R6046ANZ Datasheet(HTML) 1 Page - Rohm |
1 / 6 page Data Sheet www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10V Drive Nch MOSFET R6046ANZ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. Application Switching Packaging specifications Inner circuit Package Bulk Code - Basic ordering unit (pieces) 360 R6046ANZ Absolute maximum ratings (Ta = 25 C) Symbol Limits Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS 30 V Continuous ID 46 A Pulsed IDP 115 A Continuous IS 46 A Pulsed ISP 115 A Avalanche current IAS 23 A Avalanche energy EAS 142 mJ Power dissipation PD 120 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw 10s, Duty cycle1% *2 L 500 H, VDD=50V, RG=25, Tch=25°C *3 Limited only by maximum channel temperature allowed. *4 TC=25°C Thermal resistance Symbol Limits Unit Channel to Case Rth (ch-c) 1.04 C / W Parameter Type Source current (Body Diode) Drain current Parameter *1 (1) Gate (2) Drain (3) Source 1 BODY DIODE *2 *2 *3 *4 *3 15.5 φ3.6 5.5 3.0 2.0 3.0 0.9 5.45 5.45 0.75 2.0 TO-3PF (1) (2) (3) *1 (1) (3) (2) ∗1 (1) Gate (2) Drain (3) Source 1/5 2011.10 - Rev.A |
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