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RB411VA-50 Datasheet(PDF) 1 Page - Rohm |
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RB411VA-50 Datasheet(HTML) 1 Page - Rohm |
1 / 4 page www.rohm.com ©20 12 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode RB411VA-50 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification Features 1) Small mold type. (TUMD2) 2) High reliability. Construction Silicon epitaxial planar Structure Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25°C) Symbol Unit VRM V VR V Io A IFSM A Tj °C Tstg °C Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit VF1 - - 0.50 V IF=500mA VF2 - - 0.30 V IF=10mA Reverse current IR -- 30 μAVR=10V Capacitance between terminals Ct - 20 - pF VR=10V , f=1MHz Parameter Forawrd voltage Conditions Storage temperature 40 to 125 Junction temperature 125 Reverse voltage (DC) 20 Average rectified forward current 0.5 Parameter Limits Reverse voltage (repetitive peak) 50 Forward current surge peak (60Hz・1cyc) 3 1.1 TUMD2 4.0±0.1 2.0±0.05 φ1.55±0.1 0 1.43±0.05 4.0±0.1 φ1.0±0.2 0 0.25±0.05 0.9±0.08 ROHM : TUMD2 dot (year week factory) + day 1.3±0.05 0.8±0.05 0.6±0.2 0.1 0.17±0.1 0.05 1/3 2012.03 - Rev.C |
Similar Part No. - RB411VA-50_12 |
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Similar Description - RB411VA-50_12 |
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