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RCD050N20 Datasheet(PDF) 2 Page - Rohm |
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RCD050N20 Datasheet(HTML) 2 Page - Rohm |
2 / 7 page www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RCD050N20 Electrical characteristics (Ta = 25 C) Symbol Min. Typ. Max. Unit Gate-source leakage IGSS -- 100 nA VGS=30V, VDS=0V Drain-source breakdown voltage V(BR)DSS 200 - - V ID=1mA, VGS=0V Zero gate voltage drain current IDSS -- 10 AVDS=200V, VGS=0V Gate threshold voltage VGS (th) 3.25 - 5.25 V VDS=10V, ID=1mA Forward transfer admittance l Yfs l1 2 - S VDS=10V, ID=2.5A Input capacitance Ciss - 380 - pF VDS=25V Output capacitance Coss - 30 - pF VGS=0V Reverse transfer capacitance Crss - 15 - pF f=1MHz Turn-on delay time td(on) - 17 - ns VDD 100V, ID=2.5A Rise time tr - 15 - ns VGS=10V Turn-off delay time td(off) - 22 - ns RL=40 Fall time tf - 11 - ns RG=10 Total gate charge Qg - 9.0 - nC VDD 100V, ID=5A Gate-source charge Qgs - 3.5 - nC VGS=10V Gate-drain charge Qgd - 3.5 - nC *Pulsed Body diode characteristics (Source-Drain) Symbol Min. Typ. Max. Unit Forward Voltage VSD - - 1.5 V Is=5A, VGS=0V *Pulsed Conditions m Parameter Static drain-source on-state resistance RDS (on) ID=2.5A, VGS=10V - 470 618 Parameter Conditions * * * * * * * * * * 2/6 2011.09 - Rev.A |
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