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RCD050N20 Datasheet(PDF) 1 Page - Rohm

Part # RCD050N20
Description  10V Drive Nch MOSFET
Download  7 Pages
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

RCD050N20 Datasheet(HTML) 1 Page - Rohm

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Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
10V Drive Nch MOSFET
RCD050N20
Structure
Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High-speed switching.
3) Wide range of SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
Application
Switching
Packaging specifications
Inner circuit
Package
Taping
Code
TL
Basic ordering unit (pieces)
2500
RCD050N20
Absolute maximum ratings (Ta = 25
C)
Symbol
Limits
Unit
Drain-source voltage
VDSS
200
V
Gate-source voltage
VGSS
30
V
Continuous
ID
5A
Pulsed
IDP
20
A
Continuous
IS
5A
Pulsed
ISP
20
A
Avalanche current
IAS
2.5
A
Avalanche energy
EAS
1.83
mJ
Power dissipation
PD
20
W
Channel temperature
Tch
150
C
Range of storage temperature
Tstg
55 to 150
C
*1 Pw
10s, Duty cycle1%
*2 L
500
H, VDD=50V, RG=25, Tch=25C
*3 Limited only by maximum temperature allowed.
*4 TC=25C
Thermal resistance
Symbol
Limits
Unit
Channel to Case
Rth (ch-c)
6.25
C / W
* TC=25°C
* Limited only by maximum temperature allowed.
Parameter
Type
Source current
(Body Diode)
Drain current
Parameter
*1
*1
*2
*2
*3
(1) Gate
(2) Drain
(3) Source
1 BODY DIODE
*3
*4
CPT3
(SC-63)
<SOT-428>
6.5
2.3
(2)
(3)
0.65
(1)
0.75
2.3
0.9
5.1
2.3
0.5
1.0
0.5
*
(1)
(3)
(2)
∗1
1/6
2011.09 - Rev.A


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