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BTS432D2 Datasheet(PDF) 4 Page - Siemens Semiconductor Group

Part No. BTS432D2
Description  Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation Thermal shutdown)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BTS 432 D2
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C,
Vbb = 12 V unless otherwise specified
min
typ
max
Semiconductor Group
4
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)8),
( max 400
µs if VON > VON(SC) )
IL(SCp)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
--
--
24
--
44
--
74
--
--
A
Repetitive short circuit current limit
IL(SCr)
Tj = Tjt (see timing diagrams, page 10)
22
35
--
A
Short circuit shutdown delay after input pos. slope
VON > VON(SC),
Tj =-40..+150°C:
min value valid only, if input "low" time exceeds 30
µs
td(SC)
80
--
400
µs
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL), IL= 30 mA
VON(CL)
--
58
--
V
Short circuit shutdown detection voltage
(pin 3 to 5)
VON(SC)
--
8.3
--
V
Thermal overload trip temperature
Tjt
150
--
--
°C
Thermal hysteresis
∆T
jt
--
10
--
K
Inductive load switch-off energy dissipation9),
Tj Start = 150 °C, single pulse
Vbb = 12 V:
Vbb = 24 V:
EAS
ELoad12
ELoad24
--
--
1.7
1.3
1.0
J
Reverse battery (pin 3 to 1) 10)
-
Vbb
--
--
32
V
Integrated resistor in Vbb line
Rbb
--
120
--
Diagnostic Characteristics
Open load detection current
Tj=-40 °C:
(on-condition)
Tj=25..150°C:
IL (OL)
2
2
--
--
900
750
mA
8
)
Short circuit current limit for max. duration of 400
µs, prior to shutdown (see td(SC) page 4)
9)
While demagnetizing load inductance, dissipated energy in PROFET is
EAS=
VON(CL) * iL(t) dt, approx.
EAS= 1/2 * L * I
2
L
* (
VON(CL)
VON(CL) - Vbb
), see diagram page 8
10
) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current IGND of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under
these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional
external GND-resistor (150
Ω). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).




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