2N6040

2N6041

2N6042

MAXIMUM RATINGS: (TC=25°C)

SYMBOL

2N6043

2N6044

2N6045

UNITS

Collector-Base Voltage

VCBO

60

80

100

V

Collector-Emitter Voltage

VCEO

60

80

100

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

8.0

A

Peak Collector Current

ICM

16

A

Base Current

IB

120

mA

Power Dissipation

PD

75

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJC

1.67

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=Rated VCBO

20

µA

ICEV

VCE=Rated VCEO, VBE(OFF)=1.5V

20

µA

ICEV

VCE=Rated VCEO, VBE(OFF)=1.5V, TC=150°C

200

µA

ICEO

VCE=Rated VCEO

20

µA

IEBO

VEB=5.0V

2.0

mA

BVCEO

IC=100mA (2N6040, 2N6043)

60

V

BVCEO

IC=100mA (2N6041, 2N6044)

80

V

BVCEO

IC=100mA (2N6042, 2N6045)

100

V

VCE(SAT)

IC=4.0A, IB=16mA (2N6040, 2N6041, 2N6043, 2N6044)

2.0

V

VCE(SAT)

IC=3.0A, IB=12mA (2N6042, 2N6045)

2.0

V

VCE(SAT)

IC=8.0A, IB=80mA

4.0

V

VBE(SAT)

IC=8.0A, IB=80mA

4.5

V

VBE(ON)

VCE=4.0V, IC=4.0A

2.8

V

hFE

VCE=4.0V, IC=4.0A (2N6040, 2N6041, 2N6043, 2N6044)

1,000

20,000

hFE

VCE=4.0V, IC=3.0A (2N6042, 2N6045)

1,000

20,000

hFE

VCE=4.0V, IC=8.0A

100

2N6040 2N6041 2N6042 PNP

2N6043 2N6044 2N6045 NPN

COMPLEMENTARY SILICON POWER

DARLINGTON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N6040 and

2N6043 Series types are Complementary Silicon

Power Transistors, manufactured by the epitaxial

base process, designed for general purpose amplifier

applications.

MARKING: FULL PART NUMBER

TO-220 CASE

R1 (16-November 2009)

www.centr a lsemi.com