BTS542D2 datasheet(4/13 Pages) SIEMENS

Part #	BTS542D2

Description	Smart Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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BTS 542 D2

Parameter and Conditions

Symbol

Values

Unit

at

Tj = 25 °C, Vbb = 12 V unless otherwise specified

min

typ

max

Semiconductor Group

Page 4

13.Nov.95

Protection Functions

Initial peak short circuit current limit (pin 3 to 5)7),

( max 400

ms if VON > VON(SC) )

IL(SCp)

Tj =-40°C:

Tj =25°C:

Tj =+150°C:

--

45

--

95

--

140

--

A

Repetitive short circuit current limit

IL(SCr)

Tj = Tjt (see timing diagrams, page 10)

30

70

--

A

Short circuit shutdown delay after input pos. slope

VON > VON(SC),

Tj =-40..+150°C:

min value valid only, if input "low" time exceeds 30

ms

td(SC)

80

--

400

ms

Output clamp (inductive load switch off)

at

VOUT = Vbb - VON(CL), IL= 30 mA

VON(CL)

--

58

--

V

Short circuit shutdown detection voltage

(pin 3 to 5)

VON(SC)

--

8.3

--

V

Thermal overload trip temperature

Tjt

150

--

°C

Thermal hysteresis

,Tjt

--

10

--

K

Inductive load switch-off energy dissipation8),

Tj Start = 150 °C, single pulse

Vbb = 12 V:

Vbb = 24 V:

EAS

ELoad12

ELoad24

--

2.1

1.7

1.2

J

Reverse battery (pin 3 to 1) 9)

-

Vbb

--

32

V

Integrated resistor in

Vbb line

Rbb

--

120

--

W

Diagnostic Characteristics

Open load detection current

Tj=-40 °C:

(on-condition)

Tj=25..150°C:

IL (OL)

2

--

1900

1500

mA

7

)

Short circuit current limit for max. duration of td(SC) max=400

ms, prior to shutdown

8)

While demagnetizing load inductance, dissipated energy in PROFET is

EAS=

òò VON(CL) * iL(t) dt, approx.

EAS= 1/2 * L * I

2

L

* (

VON(CL)

VON(CL) - Vbb

), see diagram page 8

9

)

Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.

Reverse current I

GND of » 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under

these condition is dependent on the size of the heatsink. Reverse I

GND can be reduced by an additional

external GND-resistor (150

W). Input and Status currents have to be limited (see max. ratings page 2 and

circuit page 7).

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