PN4209

PNP SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR PN4209 is a PNP

Silicon Transistor designed for high speed switching

applications.

MARKING: FULL PART NUMBER

TO-92 CASE

SYMBOL

UNITS

Collector-Base Voltage

VCBO

15

V

Collector-Emitter Voltage

VCEO

15

V

Emitter-Base Voltage

VEBO

4.5

V

Continuous Collector Current

IC

200

mA

Power Dissipation

PD

625

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

200

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICES

VCE=8.0V

10

nA

ICES

VCE=8.0V, TA=125°C

5.0

μA

BVCBO

IC=100μA

15

V

BVCES

IC=100μA

15

V

BVCEO

IC=3.0mA

15

V

BVEBO

IE=100μA

4.5

V

VCE(SAT)

IC=1.0mA, IB=100μA

0.15

V

VCE(SAT)

IC=10mA, IB=1.0mA

0.18

V

VCE(SAT)

IC=50mA, IB=5.0mA

0.60

V

VBE(SAT)

IC=1.0mA, IB=100μA

0.80

V

VBE(SAT)

IC=10mA, IB=1.0mA

0.69

0.86

V

VBE(SAT)

IC=50mA, IB=5.0mA

1.5

V

hFE

VCE=0.5V, IC=1.0mA

35

hFE

VCE=0.3V, IC=10mA

50

120

hFE

VCE=0.3V, IC=10mA, TA=-55°C

20

hFE

VCE=1.0V, IC=50mA

40

fT

VCE=10V, IC=10mA, f=100MHz

850

MHz

Cob

VCB=5.0V, IE=0

7.0

pF

Cib

VBE=0.5V, IC=0

7.0

pF

R0 (1-December 2011)

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