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BTS611L1E3230 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part # BTS611L1E3230
Description  Smart Two Channel Highside Power Switch
Download  14 Pages
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BTS611L1E3230 Datasheet(HTML) 3 Page - Siemens Semiconductor Group

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BTS 611 L1
Semiconductor Group
3
Thermal Characteristics
Parameter and Conditions
Symbol
Values
Unit
min
typ
max
Thermal resistance
chip - case, both channels:
each channel:
junction - ambient (free air):
RthJC
RthJA
--
--
--
--
--
--
3.5
7.0
75
K/W
SMD version, device on PCB5):37
5
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2 (one layer, 70
µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Electrical Characteristics
Parameter and Conditions, each channel
Symbol
Values
Unit
at
Tj = 25 °C, Vbb = 12 V unless otherwise specified
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 1 or 7)
IL = 1.8 A
Tj=25 °C:
each channel
Tj=150 °C:
RON
--
160
320
200
400
m
Ω
Nominal load current, ISO Norm (pin 4 to 1 or 7)
VON = 0.5 V, TC = 85 °C
each channel:
both channels parallel:
IL(ISO)
1.8
3.5
2.3
4.4
--
--
A
Output current (pin 1 or 7) while GND disconnected
or GND pulled up,
Vbb=30 V, VIN= 0, see diagram
page 8
IL(GNDhigh)
--
--
10
mA
Turn-on time
IN
to 90%
VOUT:
Turn-off time
IN
to 10%
VOUT:
RL = 12
Ω, Tj =-40...+150°C
ton
toff
80
80
200
200
400
400
µs
Slew rate on
10 to 30%
VOUT, RL = 12
Ω, Tj =-40...+150°C
d
V /dton
0.1
--
1
V/
µs
Slew rate off
70 to 40%
VOUT, RL = 12
Ω, Tj =-40...+150°C
-d
V/dtoff
0.1
--
1
V/
µs


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