DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N5820 series

types are epoxy molded complementary silicon

small signal transistors manufactured by the

epitaxial planar process designed for general

purpose amplifier applications where a high

collector current rating is required.

MARKING CODE: FULL PART NUMBER

2N5820 2N5822 NPN

2N5821 2N5823 PNP

COMPLEMENTARY

SILICON TRANSISTORS

TO-92-18R CASE

Central

Semiconductor Corp.

TM

R1 (21-October 2005)

MAXIMUM RATINGS: (TA=25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

70

V

Collector-Emitter Voltage

VCES

70

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

5.0

V

Collector Current

IC

750

mA

Peak Collector Current

ICM

1.0

A

Power Dissipation

PD

625

mW

Power Dissipation (TC=25°C)

PD

1.5

W

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

200

°C/W

Thermal Resistance

ΘJC

83.3

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

2N5820

2N5822

2N5821

2N5823

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

ICBO

VCB=25V

100

100

nA

ICBO

VCB=25V, TA=100°C

15

15

µA

IEBO

VEB=5.0V

10

10

µA

BVCES

IC=10µA

70

70

V

BVCEO

IC=10mA

60

60

V

BVEBO

IE=10µA

5.0

5.0

V

VCE(SAT)

IC=500mA, IB=50mA

0.75

0.75

V

VBE(SAT)

IC=500mA, IB=50mA

1.2

1.2

V

VBE(ON)

VCE=2.0V, IC=500mA

0.60

1.1

0.60

1.1

V

hFE

VCE=2.0V, IC=2.0mA

60

120

100

250

hFE

VCE=2.0V, IC=500mA

20

25