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2N5821 Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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2N5821 Datasheet(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5820 series types are epoxy molded complementary silicon small signal transistors manufactured by the epitaxial planar process designed for general purpose amplifier applications where a high collector current rating is required. MARKING CODE: FULL PART NUMBER 2N5820 2N5822 NPN 2N5821 2N5823 PNP COMPLEMENTARY SILICON TRANSISTORS TO-92-18R CASE Central Semiconductor Corp. TM R1 (21-October 2005) MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 70 V Collector-Emitter Voltage VCES 70 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 750 mA Peak Collector Current ICM 1.0 A Power Dissipation PD 625 mW Power Dissipation (TC=25°C) PD 1.5 W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C Thermal Resistance ΘJA 200 °C/W Thermal Resistance ΘJC 83.3 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5820 2N5822 2N5821 2N5823 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=25V 100 100 nA ICBO VCB=25V, TA=100°C 15 15 µA IEBO VEB=5.0V 10 10 µA BVCES IC=10µA 70 70 V BVCEO IC=10mA 60 60 V BVEBO IE=10µA 5.0 5.0 V VCE(SAT) IC=500mA, IB=50mA 0.75 0.75 V VBE(SAT) IC=500mA, IB=50mA 1.2 1.2 V VBE(ON) VCE=2.0V, IC=500mA 0.60 1.1 0.60 1.1 V hFE VCE=2.0V, IC=2.0mA 60 120 100 250 hFE VCE=2.0V, IC=500mA 20 25 |
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