3

3 - 6

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

DIS

CO

NTIN

UE

D

PR

OD

UC

T

No

t Reco

mm

ended

for

Ne

w D

esi

gns

Outline Drawing

Absolute Maximum Ratings

Drain Bias Voltage (Vdd1, Vdd2, Vdd3)

7 Vdc

Gate Bias Voltage (Vgg)

-4.0 to -1.0 Vdc

RF Input Power (RFIN)(Vdd = +5.0 Vdc)

+10 dBm

Channel Temperature

175 °C

Continuous Pdiss (T= 85 °C)

(derate 25.89 mW/°C above 85 °C)

2.33W

Thermal Resistance

(channel to die bottom)

38.6 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-55 to +85 °C

Vdd (Vdc)

Idd (mA)

+4.5

300

+5.0

310

+5.5

325

Note: Amplifier will operate over full voltage ranges shown

above. Vgg adjusted to achieve Idd= 310 mA at +5.0V.

Typical Supply Current vs. Vdd

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

HMC608

GaAs PHEMT MEDIUM

POWER AMPLIFIER, 9.5 - 11.5 GHz

v01.0707

NOTES:

1. ALL DIMENSIONS IN INCHES [MILLIMETERS]

2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS

3. DIE THICKNESS IS 0.004 (0.100)

4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE

5. BACKSIDE METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND

7. BOND PAD METALIZATION: GOLD

Standard

Alternate

GP-2

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.