SH8M11 datasheet(2/11 Pages) ROHM

Part #	SH8M11

Description	4V Drive Nch Pch MOSFET

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Manufacturer	ROHM [Rohm]

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Data Sheet

SH8M11



Electrical characteristics (Ta = 25

C)

<Tr1(Nch)>

Symbol

Min.

Typ.

Max.

Unit

Gate-source leakage

IGSS

--

10

AVGS=±20V, VDS=0V

Drain-source breakdown voltage V (BR)DSS

30

-

V

ID=1mA, VGS=0V

Zero gate voltage drain current

IDSS

--

1

AVDS=30V, VGS=0V

Gate threshold voltage

VGS (th)

1.0

-

2.5

V

VDS=10V, ID=1mA

-70

98

ID=3.5A, VGS=10V

-

90

126

ID=3.5A, VGS=4.5V

100

140

ID=3.5A, VGS=4V

Forward transfer admittance

l Yfs l

1.5

-

S

VDS=10V, ID=3.5A

Input capacitance

Ciss

-

85

-

pF

VDS=10V

Output capacitance

Coss

-

40

-

pF

VGS=0V

Reverse transfer capacitance

Crss

-

20

-

pF

f=1MHz

Turn-on delay time

td(on)

-4

-

ns

ID=1.7A, VDD 15V

Rise time

tr

-8

-

ns

VGS=10V

Turn-off delay time

td(off)

-

18

-

ns

RL=8.8

Fall time

tf

-3

-

ns

RG=10

Total gate charge

Qg

-

1.9

-

nC ID=3.5A, VDD 15V

Gate-source charge

Qgs

-

0.8

-

nC VGS=5V

Gate-drain charge

Qgd

-

0.4

-

nC

*Pulsed



Body diode characteristics (Source-Drain) (Ta = 25

C)

Symbol

Min.

Typ.

Max.

Unit

Forward Voltage

VSD

-

1.2

V

Is=3.5A, VGS=0V

*Pulsed

Parameter

Conditions

Parameter

Static drain-source on-state

resistance

RDS (on)

m



*

2/10

2011.10 - Rev.A

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