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SMTPB180 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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SMTPB180 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page V I I PP I H I RM I BO VRM VBR VBO I R Tamb=50 5.0 W 10/1000 s 8/20 s 100 1 50 tp=20ms 50 A tp=20ms 25 A 2s VRM 5 kV/ µS -55to+150 150 230 Symbol Value Unlt Rth(j-l) 20 /W Rth(j-a) 75 /W I H C min. note 3 max. note 4 mA PF 2 56 62 50 82 800 150 300 2 90 100 50 133 800 150 200 Symbol VRM IRM VR VBR VBO IH IBO IPP C SMTPB---SERIES GALAXY ELECTRICAL Note 3: See test circuit2. Note 4: VR=1V,F=1MHz,refer to fig.3 for C versus VR. Breakover vol tage Holding current Breakover current Peak pulse current Continuous reverse voltage Break down voltage Capacitance Parameter Stand-off voltage ELECTRICAL CHARACTERISTICS (TA=25 ) Leakage current at stand-off voltage 2 243 270 50 360 800 150 200 SMTPB270 2 61 68 50 90 800 150 300 2 108 120 50 160 800 150 200 2 117 130 50 173 800 150 200 2 162 180 50 240 800 150 200 2 180 200 50 267 800 150 200 2 198 220 50 293 800 150 200 2 216 240 50 320 800 150 200 SMTPB180 SMTPB200 SMTPB220 SMTPB240 SMTPB68 SMTPB100 SMTPB120 SMTPB130 SMTPB62 Type IRM @ VRM max. A V VBO @ IBO max. note1 note 2 V mA Parameter Junction to leads (Llead=10mm) Junction to ambient on printed circuit (Llead=10mm) VR @ IR m in. V µA Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10s at 5mm form case Power dissipation on infinite heatsink Peak pulse current Non repetitive surge peak on-state current I 2t vallue for fusing Critical rate of rise of off-state voltage ITSM I 2t dV/dt Tstg T j THERMAL RESISTANCES Symbol Unit Value ABSOLUTE MAXIMUM RATINGS (TA=25 ) P Ipp Parameter TL BLGALAXY ELECTRICAL Document Number 028600 6 2. www.galaxycn.com BL Note1:IR measured at VR guarantees VBRmin≥VR Note 2:Measured at 50Hz(1 cycle)-See test circuit 1. 2/10 s A 500 |
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