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BUP200 Datasheet(PDF) 4 Page - Siemens Semiconductor Group |
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BUP200 Datasheet(HTML) 4 Page - Siemens Semiconductor Group |
4 / 7 page Semiconductor Group 4 Dec-06-1995 BUP 200 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C 0 20 40 60 80 100 120 °C 160 T C 0 5 10 15 20 25 30 35 40 45 W 55 P tot Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 0 20 40 60 80 100 120 °C 160 T C 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 A 3.6 I C Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C -2 10 -1 10 0 10 1 10 A I C 10 0 10 1 10 2 10 3 V V CE DC 10 ms 1 ms 100 µs 10 µs t p = 4.5µs Transient thermal impedance IGBT Zth JC = ƒ(tp) parameter: D = tp / T -2 10 -1 10 0 10 1 10 K/W Z thJC 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 |
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