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SBP13007A Datasheet(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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SBP13007A Datasheet(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
1 / 5 page Jan 2009. Rev. 0 1/5 Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved. SBP13007A High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter Test Conditions Value Units VCES Collector-Emitter Voltage VBE = 0 700 V VCEO Collector-Emitter Voltage IB = 0 400 V VEBO Emitter-Base Voltage IC = 0 9.0 V IC Collector Current 8.0 A ICP Collector pulse Current 16 A IB Base Current 4.0 A IBM Base Peak Current tP = 5ms 8.0 A PC Total Dissipation at Tc = 25℃ 85 W Total Dissipation at Ta = 25℃ 2.15 TJ Operation Junction Temperature - 40 ~ 150 ℃ TSTG Storage Temperature - 40 ~ 150 ℃ Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Thermal Characteristics Symbol Parameter Value Units RθJc Thermal Resistance Junction to Case 1.56 /W ℃ RθJA Thermal Resistance Junction to Ambient 62.5 /W ℃ |
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