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SBP13009-O Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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SBP13009-O Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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2 / 5 page  S S S SB B B BP P P P1 1 1 130 30 30 300 0 0 09 9 9 9----O O O O 2/5 Steady, Steady, Steady, Steady, keep keep keep keep you you you you advance advance advance advance E E E Ellllec ec ec ectr tr tr triiiical cal cal cal Ch Ch Ch Cha a a arrrrac ac ac actttte e e eri ri ri ris s s sti ti ti tics cs cs cs (T C=25℃ unless otherwise noted) Symbol Parameter Test Conditions Value Units Min Typ Max VCEO(sus) Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 400 - - V VCE(sat) Collector-Emitter Saturation Voltage Ic=5.0A,Ib=1.0A Ic=8.0A,Ib=1.6A Ic=12A,Ib=3.0A - - 1.0 1.5 3.0 V Ic=8.0A,Ib=1.6A Tc=100℃ - - 2.0 V VBE(sat) Base-Emitter Saturation Voltage I Ic=5.0A,Ib=1.0A Ic=8.0A,Ib=1.6A - - 1.2 1.6 V Ic=8.0A,Ib=1.6A Tc=100℃ - - 1.5 V ICBO Collector-Base Cutoff Current (Vbe=-1.5V) Vcb=700V Vcb=700V, Tc=100℃ - - 1.0 5.0 mA hFE DC Current Gain Vce=5V,Ic=5.0A Vce=5V, Ic=8.0A 10 6 - - 40 40 ts tf Resistive Load Storage Time Fall Time VCC=125V , Ic=6.0A IB1=1.6A , IB2=-1.6A Tp=25㎲ - 1.5 0.17 3.0 0.4 ㎲ ts tf Inductive Load Storage Time Fall Time VCC=15V ,Ic=5A IB1=1.6A , Vbe(off)=5V L=0.35mH,Vclamp=300V - - 0.8 0.04 2.0 0.1 ㎲ ts tf Inductive Load Storage Time Fall Time VCC=15V ,Ic=1A IB1=0.4A , Vbe(off)=5V L=0.2mH,Vclamp=300V Tc=100℃ - - 0.8 0.05 2.5 0.15 ㎲ Not Not Not Note e e e:::: Pulse Test : Pulse width 300, Duty cycle 2% |
Similar Part No. - SBP13009-O |
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Similar Description - SBP13009-O |
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