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WBP13007-K Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

Part # WBP13007-K
Description  High Voltage Fast-Switching NPN Power Transistor
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Manufacturer  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Direct Link  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

WBP13007-K Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

  WBP13007-K Datasheet HTML 1Page - Shenzhen Winsemi Microelectronics Co., Ltd WBP13007-K Datasheet HTML 2Page - Shenzhen Winsemi Microelectronics Co., Ltd WBP13007-K Datasheet HTML 3Page - Shenzhen Winsemi Microelectronics Co., Ltd WBP13007-K Datasheet HTML 4Page - Shenzhen Winsemi Microelectronics Co., Ltd WBP13007-K Datasheet HTML 5Page - Shenzhen Winsemi Microelectronics Co., Ltd  
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WBP13007-K
2/5
Steady,
Steady,
Steady,
Steady, keep
keep
keep
keep you
you
you
you advance
advance
advance
advance
Electrical Characteristics (T
C=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
Value
Units
Min
Typ
Max
V
CEO(sus)
Collector-Emitter Breakdown Voltage
Ic=10mA,Ib=0
400
-
-
V
V
CE(sat)
Collector-Emitter Saturation Voltage
Ic=2.0A,Ib=0.4A
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=2.0A
-
-
1.0
1.5
2.0
V
Ic=5.0A,Ib=1.0A
Tc=100℃
-
-
2.5
V
V
BE(sat)
Base-Emitter Saturation Voltage
Ic=2.0A,Ib=0.4A
Ic=5.0A,Ib=1.0A
-
-
1.2
1.6
V
Ic=5.0A,Ib=1.0A
Tc=100
℃
-
-
1.5
V
I
CBO
Collector-Base Cutoff Current
(Vbe=-1.5V)
Vcb=700V
Vcb=700V, Tc=100℃
-
-
1.0
5.0
mA
h
FE
DC Current Gain
Vce=5V,Ic=2.0A
Vce=5V, Ic=5.0A
8
5
-
-
40
40
ts
tf
Resistive Load
Storage Time
Fall Time
V
CC=125V ,
Ic=5.0A
IB1=1.0A ,
IB2=-1.0A
Tp=25㎲
-
1.5
0.17
3.0
0.4
㎲
ts
tf
Inductive Load
Storage Time
Fall Time
V
=15V ,Ic=5A
cc
IB1=1.0A , IB2=-2.5A
L=0.35mH,Vclamp=300V
-
-
0.8
0.06
2.0
0.12
㎲
ts
tf
Inductive Load
Storage Time
Fall Time
VCC=15V ,Ic=1A IB1=0.4A ,
IB2=-1.0A
L=0.35mH,Vclamp=300V
Tc=100℃
-
-
1.0
0.07
3.0
0.15
㎲
Not
Not
Not
Note
e
e
e::::
Pulse Test : Pulse width 300, Duty cycle 2%


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