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VT6M1 Datasheet(PDF) 1 Page - Rohm |
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VT6M1 Datasheet(HTML) 1 Page - Rohm |
1 / 9 page Data Sheet www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1.2V Drive Nch + Pch MOSFET VT6M1 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Small package(VMT6). 3) Low voltage drive(1.2V drive). Application Switching Packaging specifications Inner circuit Package Taping Code T2CR Basic ordering unit (pieces) 8000 VT6M1 Absolute maximum ratings (Ta = 25 C) Tr1 : N-ch Tr2 : P-ch Drain-source voltage VDSS 20 20 V Gate-source voltage VGSS 8 10 V Continuous ID 100 100 mA Pulsed IDP 400 400 mA W / TOTAL W / ELEMENT Channel temperature Tch C Range of storage temperature Tstg C *1 Pw 10s, Duty cycle1% *2 Each terminal mounted on a recommended land. Type Drain current Parameter 0.12 Power dissipation PD 0.15 Unit Limits 55 to 150 Symbol 150 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain 1 ESD PROTECTION DIODE 2 BODY DIODE *1 *2 1.2 0.5 0.13 0.16 0.8 ±0.1 0.4 0.4 (6) (5) (4) (1) (2) (3) VMT6 Abbreviated symbol : M01 ∗2 ∗2 ∗1 ∗1 (1) (2) (6) (5) (3) (4) 1/8 2011.09 - Rev.A |
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