ZDX130N50 datasheet(1/6 Pages) ROHM

Part #	ZDX130N50

Description	10V Drive Nch MOSFET

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Manufacturer	ROHM [Rohm]

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Data Sheet

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10V Drive Nch MOSFET

ZDX130N50



Structure



Dimensions (Unit : mm)

Silicon N-channel MOSFET



Features

1) Low on-resistance.

2) High-speed switching.

3) Gate-source voltage

VGSS guaranteed to be ±30V .

4) High package power.



Application

Switching



Packaging specifications



Inner circuit

Package

Bulk

Code

-

Basic ordering unit (pieces)

500

ZDX130N50





Absolute maximum ratings (Ta = 25

C)

Symbol

Limits

Unit

Drain-source voltage

VDSS

500

V

Gate-source voltage

VGSS

30

V

Continuous

ID

13

A

Pulsed

IDP

39

A

Continuous

IS

13

A

Pulsed

ISP

39

A

Avalanche current

IAS

10

A

Avalanche energy

EAS

50

mJ

Power dissipation

PD

40

W

Channel temperature

Tch

150

C

Range of storage temperature

Tstg

55 to 150

C

*1 Pw

10s, Duty cycle1%

*2 Tc=25°C

*3 L 1mH, VDD=50V, RG=25 Starting Tch=25°C



Thermal resistance

Symbol

Limits

Unit

Channel to Case

Rth (ch-c)

3.125

C / W

Parameter

Type

Source current

(Body Diode)

Drain current

Parameter

*2

*1

TO-220FM

4.5

2.8

0.75

φ3.2

(2)(3)

(1)

0.8

2.54

2.6

2.54

1.3

1.2

10.0

TO-220FM

4.5

2.8

0.75

φ3.2

(2)(3)

(1)

0.8

2.54

2.6

2.54

1.3

1.2

10.0

(1) Gate

(2) Drain

(3) Source

1 Body Diode

*3

∗1

(1)

(2)

(3)

1/5

2011.08- Rev.A

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