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Q67040-S4011-A2 Datasheet(PDF) 7 Page - Siemens Semiconductor Group |
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Q67040-S4011-A2 Datasheet(HTML) 7 Page - Siemens Semiconductor Group |
7 / 8 page Semiconductor Group 7 30/Jan/1998 BUZ 102 S SPP52N05 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 37 A, VGS = 10 V -60 -20 20 60 100 °C 180 T j 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.050 0.055 0.060 0.065 Ω 0.075 R DS (on) typ 98% Gate threshold voltage VGS(th)= f (Tj) parameter:VGS=VDS, ID =90µA -60 -20 20 60 100 140 V 200 T j 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 V 5.0 V GS(th) min typ max Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 0 5 10 15 20 25 30 V 40 V DS 2 10 3 10 4 10 pF C C iss C oss C rss Forward characteristics of reverse diode I F = ƒ(VSD) parameter: T j, tp = 80 µs 0 10 1 10 2 10 3 10 A I F 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 V SD T j = 25 °C typ T j = 25 °C (98%) T j = 175 °C typ T j = 175 °C (98%) |
Similar Part No. - Q67040-S4011-A2 |
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Similar Description - Q67040-S4011-A2 |
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