2SA2210 datasheet(2/5 Pages) SANYO

Part #	2SA2210

Description	PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

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Manufacturer	SANYO [Sanyo Semicon Device]

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2SA2210

No. A0667-2/5

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB= --40V, IE=0A

--10

μA

Emitter Cutoff Current

IEBO

VEB= --4V, IC=0A

--10

μA

DC Current Gain

hFE

VCE= --2V, IC= --1A

150

450

Gain-Bandwidth Product

fT

VCE= --10V, IC= --1A

140

MHz

Output Capacitance

Cob

VCB= --10V, f=1MHz

215

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC= --7A, IB= --350mA

--200

--500

mV

Base-to-Emitter Saturation Voltage

VBE(sat)

IC= --7A, IB= --350mA

--1.2

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC= --100μA, IE=0A

--50

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC= --1mA, RBE=∞

--50

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE= --100μA, IC=0A

--6

V

Turn-On Time

ton

See speciﬁed Test Circuit

60

ns

Storage Time

tstg

See speciﬁed Test Circuit

270

ns

Fall Time

tf

See speciﬁed Test Circuit

20

ns

Switching Time Test Circuit

VR

RL

VCC= --20V

VBE=5V

IC=20IB1= --20IB2= --7A

+

50

Ω

INPUT

OUTPUT

RB

100

μF

470

μF

PW=20

μs

IB1

IB2

D.C.

≤1%

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

IC -- VCE

IT12019

0

--2.0

--0.5

--1.0

--1.5

0

--2

--14

--12

--10

--8

--6

--4

--16

--18

--20

IT12020

0

--1.0

--0.8

--0.2

--0.4

--0.6

0

--1

--7

--6

--5

--4

--3

--2

--8

--9

--10

IB=0mA

--400

mA

--500

mA

--600

mA

--300

mA

--200m

A

--100mA

--120mA

--140mA

--160m

A

--180mA

--80m

A

--100

mA

--60mA

--40mA

--

20mA

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