C67078-A1401-A2 datasheet(2/6 Pages) SIEMENS

Part #	C67078-A1401-A2

Description	SIPMOS Power Transistor (N channel Enhancement mode FREDFET)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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2 / 6 page

Semiconductor Group

509

BUZ 205

Electrical Characteristics

at

T

j = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static characteristics

Drain-source breakdown voltage

V

GS = 0 V, ID = 0.25 mA

V

(BR) DSS

400

–

V

Gate threshold voltage

V

GS = VDS , ID = 1 mA

V

GS (th)

2.1

4.0

Zero gate voltage drain current

V

DS = 400 V, VGS = 0 V

T

j =

25 ˚C

T

j = 125 ˚C

I

DSS

–

20

100

250

1000

µA

Gate-source leakage current

V

GS = 20 V, VDS = 0 V

I

GSS

–

10

100

nA

Drain-source on-resistance

V

GS = 10 V, ID = 4.0 A

R

DS (on)

–

0.9

1.0

Ω

Dynamic characteristics

Forward transconductance

V

DS ≥ 2 x ID x RDS(on)max , ID = 4.0 A

g

fs

1.7

2.9

–

S

Input capacitance

V

GS = 0 V, VDS = 25 V, f = 1 MHz

C

iss

–

1500

2000

pF

Output capacitance

V

GS = 0 V, VDS = 25 V, f = 1 MHz

C

oss

–

120

180

Reverse transfer capacitance

V

GS = 0 V, VDS = 25 V, f = 1 MHz

C

rss

–35

60

Turn-on time

t

on , (ton = td (on) + tr)

V

DD = – 30 V, VGS = 10 V, ID = 2.7 A, RGS =50 Ω

t

d (on)

–

3045ns

t

r

–40

60

Turn-off time

t

off , (toff = td (off) + tf)

V

DD = – 30 V, VGS = 10 V, ID = 2.7 A, RGS =50 Ω

t

d (off)

–

110

140

t

f

–50

65

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C67078-A1401-A2 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

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