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SFP50N06 Datasheet(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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SFP50N06 Datasheet(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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1 / 7 page  Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. Rev, c Nov.2008 SFP50N06 SFP50N06 SFP50N06 SFP50N06 Silicon Silicon Silicon Silicon N-Channel N-Channel N-Channel N-Channel MOSFET MOSFET MOSFET MOSFET Features ■ RDS(on)(Max 22mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 31nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s trench layout-based process.This technology improves the performances compared with standard parts from various sources. All of these power MOSFETs are designed for applications in switching regulators, switching convertors, motor and relay drivers, and drivers for high power bipolar switching transistors demanding high speed and low gate drive power. Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain Source Voltage 60 V ID Continuous Drain Current(@Tc=25℃) 50 A Continuous Drain Current(@Tc=100℃) 38 A IDM Drain Current Pulsed (Note1) 200 A VGS Gate to Source Voltage ±25 V EAS Single Pulsed Avalanche Energy (Note 2) 480 mJ EAR Repetitive Avalanche Energy (Note 2) 13 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.8 V/ns PD Total Power Dissipation(@Tc=25℃) 130 W Derating Factor above 25℃ 1.3 W/℃ TJ, Tstg Junction and Storage Temperature -55~150 ℃ TL Channel Temperature (for 10 seconds) 300 ℃ Thermal Characteristics Symbol Parameter Value Units Min Typ Max RQJC Thermal Resistance, Junction-to-Case - - 0.96 ℃/W RQcs Case-to-Sink, Flat, Greased Surface 0.5 ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/W G G G G D D D D S S S S TO220 TO220 TO220 TO220 |
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