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ICE2QR4765G Datasheet(PDF) 10 Page - Infineon Technologies AG

Part # ICE2QR4765G
Description  Off-Line SMPS Quasi-Resonant PWM Controller with integrated 650V CoolMOS짰 and startup cell in DSO-16/12
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

ICE2QR4765G Datasheet(HTML) 10 Page - Infineon Technologies AG

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CoolSET
® - Q1
ICE2QR4765G
Functional Description
Version 2.0
10
July 26, 2011
0V. As a result, the current flowing out from ZC pin can be
calculated as
[5]
When this current is higher than I
ZC_1, the amount of current
exceeding this threshold is used to generate an offset to
decrease the maximum limit on V
CS. Since the ideal curve
shown in Figure 6 is a nonlinear one, a digital block in
CoolSET
® - Q1 is implemented to get a better control of
maximum output power. Additional advantage to use digital
circuit is the production tolerance is smaller compared to
analog solutions. The typical maximum limit on V
CS versus
the ZC current is shown in Figure 7.
Figure 7
V
CS-max versus IZC
3.5
Active Burst Mode Operation
At light load condition, the IC enters Active Burst Mode
operation to minimize the power consumption. Details about
Active Burst Mode operation are explained in the following
paragraphs.
3.5.1
Entering Active Burst Mode Operation
For determination of entering Active Burst Mode operation,
three conditions apply:
the feedback voltage is lower than the threshold of
V
FBEB(1.25V).
Accordingly, the peak current sense
voltage across the shunt resistor is 0.17V;
the up/down counter is 7; and
a certain blanking time (t
BEB).
Once all of these conditions are fulfilled, the Active Burst
Mode flip-flop is set and the controller enters Active Burst
Mode operation. This multi-condition determination for
entering
Active
Burst
Mode
operation
prevents
mistriggering of entering Active Burst Mode operation, so
that the controller enters Active Burst Mode operation only
when the output power is really low during the preset
blanking time.
3.5.2
During Active Burst Mode Operation
After entering the Active Burst Mode the feedback voltage
rises as V
OUT starts to decrease due to the inactive PWM
section. One comparator observes the feedback signal if the
voltage level V
BH (3.6V) is exceeded. In that case the
internal circuit is again activated by the internal bias to start
with switching.
Turn-on of the power MOSFET is triggered by the timer.
The PWM generator for Active Burst Mode operation
composes of a timer with a fixed frequency of 52kHz,
typically, and an analog comparator. Turn-off is resulted by
comparison of the voltage signal v
1
with an internal
threshold, by which the voltage across the shunt resistor V
csB
is 0.34V, accordingly. A turn-off can also be triggered by the
maximal duty ratio controller which sets the maximal duty
ratio to 50%. In operation, the output flip-flop will be reset
by one of these signals which comes first.
If the output load is still low, the feedback signal decreases
as the PWM section is operating. When feedback signal
reaches the low threshold V
BL(3.0V), the internal bias is
reset again and the PWM section is disabled until the next
regulation signal increases beyond the V
BH threshold. In
Active Burst Mode, the feedback signal is changing like a
saw tooth between 3.0V and 3.6V shown in Figure 8.
3.5.3
Leaving Active Burst Mode Operation
The feedback voltage immediately increases if there is a high
load jump. This is observed by one comparator. As the
current limit is 34% during Active Burst Mode a certain load
is needed so that feedback voltage can exceed V
LB (4.5V).
After leaving active burst mode, maximum current can now
be provided to stabilize V
O. In addition, the up/down counter
will be set to 1 iimmediately after leaving Active Burst
I
ZC
V
BUS
N
a
R
ZC1
N
P
------------------------
=
0.6
0.7
0.8
0.9
1
300
500
700
900
1100
1300
1500
1700
1900
2100
Iz c(uA)


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