 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
SFP70N06 Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
|
||||||||||||||||||||||||||||||
SFP70N06 Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
|
|
2 / 7 page  Steady, Steady, Steady, Steady, keep keep keep keep you you you you advance advance advance advance SF SF SF SFP70 P70 P70 P70N N N N06 06 06 06 2/7 Electrical Characteristics(Tc=25℃) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current IGSS VGS=±25V,VDS=0V - - ±100 nA Drain cut -off current IDSS VDS=60V,VGS=0V - - 1 µA Drain -source breakdown voltage V(BR)DSS ID=250 µA,VGS=0V 60 - - V Breakdown voltage Temperature Coefficient △BVDSS/ △TJ ID=250µA,Referenced to 25℃ - 0.066 - V/℃ Gate threshold voltage VGS(th) VDS=10V,ID=250 µA 2.0 - 4.0 V Drain -source ON resistance RDS(ON) VGS=10V,ID=35A - - 0.014 Ω Input capacitance Ciss VDS=25V, VGS=0V, f=1MHz - 2350 3050 pF Reverse transfer capacitance Crss - 160 200 Output capacitance Coss - 690 890 Switching time Rise time tr VDD=30V, ID=35A RG=50Ω (Note4,5) - 60 130 ns Turn-on time ton - 30 70 Fall time tf - 95 200 Turn-off time toff - 125 260 Total gate charge(gate-source plus gate-drain) Qg VDS=48V, VGS=10V, ID=70A (Note4,5) - 70 90 nC Gate-source charge Qgs - 18 - Gate-drain("miller") Charge Qgd - 24 - Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR Integral Reverse p-n Junction Diode in the MOSFET - - 70 A Pulse drain reverse current IDRP - - 280 A Forward voltage(diode) VDSF IDR=70A,VGS=0V - - 1.5 V Reverse recovery time trr IDR=70A,VGS=0V, dIDR / dt =100 A / µs - 62 - ns Reverse recovery charge Qrr - 110 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=250uH IAS=70A,VDD=25V,RG=0Ω,Starting TJ=25℃ 3.ISD≤70A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution |
Similar Part No. - SFP70N06 |
|
Similar Description - SFP70N06 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
