R07DS0286EJ0800 Rev.8.00

Page 1 of 9

Mar 28, 2011

BB504M

Built in Biasing Circuit MOS FET IC

VHF&UHF RF Amplifier

Features

• Built in Biasing Circuit; To reduce using parts cost & PC board space.

• Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz

• High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz

• Withstanding to ESD;

Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.

• Provide mini mold packages; MPAK-4 (SOT-143Rmod)

Outline

RENESAS Package code: PLSP0004ZA-A

(Package name: MPAK-4)

1

4

3

2

1. Source

2. Gate1

3. Gate2

4. Drain

Notes:

1.

Marking is “DS–”.

2.

BB504M is individual type number of RENESAS BBFET.

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

6

V

Gate1 to source voltage

+6

–0

V

Gate2 to source voltage

+6

–0

V

Drain current

30

mA

Channel power dissipation

Pch

150

mW

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

R07DS0286EJ0800

(Previous: REJ03G0837-0700)

Rev.8.00

Mar 28, 2011