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BB504MDS-TL-H Datasheet(PDF) 1 Page - Renesas Technology Corp |
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BB504MDS-TL-H Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 10 page R07DS0286EJ0800 Rev.8.00 Page 1 of 9 Mar 28, 2011 Preliminary Datasheet BB504M Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz • High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. • Provide mini mold packages; MPAK-4 (SOT-143Rmod) Outline RENESAS Package code: PLSP0004ZA-A (Package name: MPAK-4) 1 4 3 2 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Marking is “DS–”. 2. BB504M is individual type number of RENESAS BBFET. Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Drain to source voltage VDS 6 V Gate1 to source voltage VG1S +6 –0 V Gate2 to source voltage VG2S +6 –0 V Drain current ID 30 mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C R07DS0286EJ0800 (Previous: REJ03G0837-0700) Rev.8.00 Mar 28, 2011 |
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