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Q62702X165 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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Q62702X165 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
2 / 4 page BXY 44P Semiconductor Group 2 Draft A02 1998-04-01 Electrical Characteristics 1) DR F [%] = 100 ´ (RF_Diode2 - RF_Diode1)/RF_Diode1 Table 2 DC Characteristics at T A = 25 °C unless otherwise specified Parameter Symbol Limit Values Unit min. typ. max. Reverse current 1 V R1 = 200 V I R1 -- 100 nA Reverse current 2 V R2 = 100 V I R2 -- 5nA Forward voltage I F = 100 mA V F - 1.0 1.05 V Table 3 AC Characteristics at T A = 25 °C unless otherwise specified Parameter Symbol Limit Values Unit min. typ. max. Total capacitance V R = 50 V, f = 1 MHz C T - 0.50 0.75 pF Forward resistance f = 100 MHz, I F1 = 10 mA R F1 700 900 1200 W Forward resistance f = 100 MHz, I F2 = 1 mA R F2 11 20 27 W Forward resistance f = 100 MHz, I F3 = 10 mA R F3 2.0 3.8 5.0 W Minority carrier lifetime I F = 10 mA, IR = 6 mA, IR = 3 mA t L 300 800 - ns Table 4 Matching Requirements at T A = 25 °C unless otherwise specified Parameter Symbol Limit Values Unit min. typ. max. Difference in forward resistance 2 1) R F2 -- 15 % Difference in forward resistance 3 1) R F3 -- 15 % |
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