BCR4AS-16LH

Preliminary

R07DS0331EJ0100 Rev.1.00

Page 2 of 6

Apr 28, 2011

Electrical Characteristics

Parameter

Symbol

BCR4AS-16LH-1

BCR4AS-16LH

Unit

Test conditions

Min.

Typ.

Max.

Min.

Typ.

Max.

Repetitive peak off-state current

—

—

2.0

—

—

2.0

mA

Tj = 150

°C

On-state voltage

—

—

1.6

—

—

1.6

V

Tc = 25

°C, I

instantaneous

measurement

Ι

—

—

1.5

—

—

1.5

V

ΙΙ

—

—

1.5

—

—

1.5

V

Gate trigger voltage

Note2

ΙΙΙ

—

—

1.5

—

—

1.5

V

Tj = 25

°C, V

Ι

—

—

10

—

—

35

mA

ΙΙ

—

—

10

—

—

35

mA

Gate trigger curent

Note2

ΙΙΙ

—

—

10

—

—

35

mA

Tj = 25

°C, V

Gate non-trigger voltage

0.2

—

—

0.2

—

—

V

Tj = 125

°C

0.1

—

—

0.1

—

—

V

Tj = 150

°C

Thermal resistance

—

—

3.8

—

—

3.8

°C/W Junction to case

Note3

Critical-rate of decay of on-state

commutating current

Note4

(di/dt)c

2.5

—

—

—

—

—

A/ms

Tj = 125

°C

(dv/dt)c < 10 V/

μs

—

—

—

3.0

—

—

A/ms

Tj = 125

°C

(dv/dt)c < 100 V/

μs

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

4. Test conditions of the critical-rate of decay of on-state commutating current is shown in the table below.

Test conditions

Commutating voltage and current waveforms

(inductive load)

1. Junction temperature

Tj = 125

°C

2. Peak off-state voltage

2. Rate of rise of off-state commutating voltage

(dv/dt)c < 10 V/

μs (I

(dv/dt)c < 100 V/

μs

Supply Voltage

Time

Time

Time

Main Current

Main Voltage

(di/dt)c

(dv/dt)c