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BCR4AS-16LH-1-B00 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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BCR4AS-16LH-1-B00 Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page BCR4AS-16LH Preliminary R07DS0331EJ0100 Rev.1.00 Page 2 of 6 Apr 28, 2011 Electrical Characteristics Parameter Symbol BCR4AS-16LH-1 (IGT item : 1) BCR4AS-16LH Unit Test conditions Min. Typ. Max. Min. Typ. Max. Repetitive peak off-state current IDRM — — 2.0 — — 2.0 mA Tj = 150 °C VDRM applied On-state voltage VTM — — 1.6 — — 1.6 V Tc = 25 °C, I TM = 6 A instantaneous measurement Ι VFGTΙ — — 1.5 — — 1.5 V ΙΙ VRGTΙ — — 1.5 — — 1.5 V Gate trigger voltage Note2 ΙΙΙ VRGTΙΙΙ — — 1.5 — — 1.5 V Tj = 25 °C, V D = 6 V RL = 6 Ω, RG = 330 Ω Ι IFGTΙ — — 10 — — 35 mA ΙΙ IRGTΙ — — 10 — — 35 mA Gate trigger curent Note2 ΙΙΙ IRGTΙΙΙ — — 10 — — 35 mA Tj = 25 °C, V D = 6 V RL = 6 Ω, RG = 330 Ω Gate non-trigger voltage VGD 0.2 — — 0.2 — — V Tj = 125 °C VD = 1/2 VDRM 0.1 — — 0.1 — — V Tj = 150 °C VD = 1/2 VDRM Thermal resistance Rth (j-c) — — 3.8 — — 3.8 °C/W Junction to case Note3 Critical-rate of decay of on-state commutating current Note4 (di/dt)c 2.5 — — — — — A/ms Tj = 125 °C (dv/dt)c < 10 V/ μs — — — 3.0 — — A/ms Tj = 125 °C (dv/dt)c < 100 V/ μs Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured on the T2 tab. 4. Test conditions of the critical-rate of decay of on-state commutating current is shown in the table below. Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj = 125 °C 2. Peak off-state voltage VD = 400 V 2. Rate of rise of off-state commutating voltage (dv/dt)c < 10 V/ μs (I GT item : 1) (dv/dt)c < 100 V/ μs Supply Voltage Time Time Time Main Current Main Voltage (di/dt)c VD (dv/dt)c |
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