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HITK0303MP Datasheet(PDF) 5 Page - Renesas Technology Corp |
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HITK0303MP Datasheet(HTML) 5 Page - Renesas Technology Corp |
5 / 7 page HITK0303MP Preliminary R07DS0484EJ0100 Rev.1.00 Page 5 of 6 Jun 22, 2011 Dynamic Input Characteristics Gate Charge Qg (nC) Switching Characteristics Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Input Capacitance vs. Gate to Source Voltage Gate to Source Voltage VGS (V) Reverse Drain Current vs. Source to Drain Voltage Source to Drain Voltage VSD (V) Body-Drain Diode Forward Voltage vs. Case Temperature Case Temperature Tc ( °C) Drain Current ID (A) 80 16 02 4 6 8 10 100 60 20 40 20 12 8 4 0 5 10 15 20 25 30 10 100 1000 600 650 700 750 800 –10 –5 0 5 10 VDS = 0 V f = 1 MHz 0 0.8 0.4 1.2 1.6 2.0 3 5 4 2 1 0 0.9 0.3 0.4 0.7 0.5 0.6 0.8 –25 0 25 50 75 100 125 150 ID = 3.7 A Tc = 25°C VDD =10 V VDD = 25 V VDS VGS 10 V 25 V 0 V, –5 V, –10 V Pulse Test Tc = 25°C VGS = 10 V 5 V 1 mA ID = 10 mA VGS = 0 Ciss Coss Crss 0 0 VGS = 0 V f = 1 MHz 1 10 100 1000 0.01 0.1 1 10 td(on) tr tf td(off) VDD = 10 V VGS = 10 V Rg = 4.7 Ω PW = 5 μs Tc = 25°C |
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