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NP50P03YDG Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # NP50P03YDG
Description  MOS FIELD EFFECT TRANSISTOR
Download  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NP50P03YDG Datasheet(HTML) 3 Page - Renesas Technology Corp

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NP50P03YDG
Chapter Title
R07DS0019EJ0200 Rev.2.00
Page 3 of 6
Mar 16, 2011
Typical Characteristics (TA = 25
°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
0
20
40
60
80
100
0
25
50
75
100
125
150
175
TC - Case Temperature -
°C
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
TC - Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
-0.1
-1
-10
-100
-1000
-0.1
-1
-10
-100
ID(pulse)
TC = 25
°C
Single Pulse
Power Dissipation Limited
PW
= 1
1
00
μs
RD
S(o
n)
Lim
1
ite
d
(V
GS
= −
110
V)
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
0.01
0.1
1
10
100
1000
Rth(ch-A): 150
°C/W
Rth(ch-C): 1.47
°C/W
Single pulse
Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt
PW - Pulse Width - s
100
μ
1 m
10 m
100 m
1
10
100
1000


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